例句與造句

1. Surface passivation process with polyimide
   聚酰亞胺表面鈍化工藝
2. Device processing : etching . surface passivation ; dielectric films
   元件制程：蝕刻，表面鈍化，介電材料薄膜。
3. The surface passivation of gaas is an unsolved problem for a long time
   砷化鎵的表面鈍化是一個長期未能很好解決的問題。
4. It is described that the innovatory technology of selective diffusion and study on surface passivation in theory for crystalline silicon solar cell
   本文的主要內(nèi)容是介紹晶體硅太陽電池選擇性擴散新工藝和表面鈍化的理論研究。
5. Key technologies and its mechanism for improving crystalline silicon solar cells in the scale manufacture have been researched in this thesis . after sioa surface passivation and forming gas treatment utilization in the scale manufacture , the surface recombination and series resistance of solar cells have been reduced while their open - circuit voltage , fill factor and efficiency improved
   本論文研究了提高晶體硅太陽電池效率規(guī)模化生產(chǎn)工藝技術(shù)的主要環(huán)節(jié)和相關(guān)機理，將sio _ 2表面鈍化、 forminggas處理用于規(guī)?；a(chǎn)，降低了太陽電池的表面復(fù)合速度和串聯(lián)電阻，提高了開路電壓、填充因子和轉(zhuǎn)換效率。
6. It's difficult to find surface passivation in a sentence. 用surface passivation造句挺難的
7. Firstly , the basic principle of solar cell is summarized ; secondly , the study on selective diffusion for crystalline silicon solar cell is introduced , including the explain away structure of selective emitter solar cell and the technological design of selective diffusion ; at last , the research of surface passivation in theory is expounded
   首先，簡要闡述了太陽電池的基本原理；其次，闡述了晶體硅太陽電池選擇性擴散的研究(其中包括選擇性發(fā)射極太陽電池的結(jié)構(gòu)說明和選擇性擴散的工藝設(shè)計) ；最后，闡述了表面鈍化的理論研究。
8. On the base of these theory calculations , we passivated the front - surface both of different surface doping concentration solar cells by a thin layer of thermally grown sio2 . the results show that the in heavy surface doping concentration cell is lower compared to the cell in light surface doping concentration . the majority of improvement in comes from the emitter surface passivation
   接著采用sio2作為鈍化膜，從實驗上比較了在不同表面濃度下單晶硅太陽電池的鈍化效果，結(jié)果表明在高表面濃度下其開路電壓比低表面濃度下的開路電壓低，這開路電壓的提高主要來源于降低了前表面復(fù)合。